Aeroflex Microelectronic Solutions

From GaAs to silicon. No one provides a more comprehensive approach to handling all your requests for standard and custom Schottkys, PINs, NIPs, varactors, detectors, limiters, capacitors, resistors, inductors, attenuator pads, and so much more. And they come delivered every way imaginable, from wafers to plastic surface mount.

Aeroflex Metelics Products

Silicon PIN Diodes:
Broadband, Mesa and Planar Beam Lead

The Aeroflex / Metelics MMP-1000 Series Beam Lead PIN diodes features a unique glass and beam construction which allows for mechanical strength and stability during assembly. They are designed for low resistance, low capacitance and fast switching time.

The Aeroflex / Metelics Mesa Beam Lead PINs are suitable for microstrip or stripline circuits and for circuits requiring high isolation from series mounted diodes as in broadband multi-throw switches, phase shifters, attenuators, limiters and modulators.

  • Fast Switching Speed
  • Low Capacitance
  • Low Resistance
  • Rugged Construction

Mesa Beam Lead PIN Diodes

Model

VB

CJ

Rs

Rs

Tl

Ts

MINV

MAX pF

MAX Ω

MAX Ω

TYP nS

MAX nS

MPN1000-12

100

.020

6.5

4.0

80

5

MPN1001-12

100

.027

6.0

3.5

80

5

MPN1002-12

100

.030

5.5

3.2

80

5

MPN1003-12

100

.035

5.0

2.9

80

5

MPN1004-12

100

.040

5.0

2.7

80

5

MPN1005-12

100

.048

5.0

2.5

80

5

MPN1006-12

100

.055

4.0

2.3

80

5

MPN1007-12

100

.065

4.0

2.1

80

5

MPN1100-12

50

.025

6.0

3.7

50

3

MPN1101-12

50

.030

5.0

3.5

50

3

MPN1102-12

50

.040

4.5

2.9

50

3

MPN1103-12

50

.060

4.0

2.5

50

3

Test Conditions

@ 10 mA

@ -10 V, 1 MHz

@ 10 mA,
1 GHz

@ 50 mA,
1 GHz

IF = 10 mA
I
R = 6 mA

20% - 80%

 

Planar Beam Lead

Model

VBR

CJ

RS

t
TYP ns

TRR

TYP

ns

PDISS

MAX

MW

Package

MIN

V

TYP

pF

MAX

pF

TYP Ω

MAX Ω

MPND4005-B15

100

0.018

0.020

5.5

6.5

125

250

B15

MPND4005-B16

100

0.018

0.020

5.5

6.5

125

250

B16

MPND4005-0402

100

0.070

0.090

5.5

6.5

125

250

0402

Test Conditions

IR = 10 µA

VR = 10 V

F = 15 GHz

CT

IF = 20 mA

F = 3 GHz

IF = 10 mA

IR = 6 mA

IF = 10 mA

VR = 10 V

TC = +25 ºC,

Derate Linearly

to +175 ºC