Aeroflex Microelectronic Solutions

From GaAs to silicon. No one provides a more comprehensive approach to handling all your requests for standard and custom Schottkys, PINs, NIPs, varactors, detectors, limiters, capacitors, resistors, inductors, attenuator pads, and so much more. And they come delivered every way imaginable, from wafers to plastic surface mount.

Aeroflex Metelics Products

Silicon Limiter Diodes

The Aeroflex / Metelics MLP-7100 Series Limiter diodes are specially processed PIN diodes with a thin intrinsic region designed for use in passive or active limiters over the entire range of frequencies from 100 MHz to beyond 20 GHz. The different “I” region thicknesses and capacitances provide variable threshold and leakage power levels and power handling capability.

  • Low Loss
  • Greater Bandwidth
  • Fast Turn on Time
MLP7130 – MLP7122
(DC Parameters)
Model
 VB CJ CJ Rs Rs Tl Pulsed
Thermal
Resistance		 Thermal
Resistance		 Package
TYP V TYP pF MAX pF TYP Ω TYP Ω TYP nS TYP C/W MAX °C/W
MLP7130 15-30 0.12 0.1 2 4 5 30 120 CS11 (C11),

CS20 (H20),

CS37 (T86),

SOD323,

CS19
MLP7131 15-30 0.2 0.15 1.5 3 5 20 80
MLP7100 20-45 0.2 0.15 1.5 5 5 20 100
MLP7101 20-45 0.5 0.3 1.2 4.5 10 12 80
MLP7102 20-45 0.7 0.5 1 4 10 10 55
MLP7140 30-60 0.12 0.1 2 4 7 20 100
MLP7141 30-60 0.2 0.15 1.5 4 7 15 70
MLP7110 45-75 0.2 0.15 1.5 4 10 15 80
MLP7111 45-75 0.5 0.3 1.2 3.5 15 10 60
MLP7112 45-75 0.7 0.5 1 3 20 6 40
MLP7120 120-180 0.2 0.15 1.5 3.5 50 1.2 40
MLP7121 120-180 0.6 0.3 1 3 50 0.5 20
MLP7122 120-180 0.8 0.5 0.5 3 100 0.3 15
Test
Conditions		 @ 10 mA @ 0 V,
1 MHz		 @ -6 V,
1 MHz		 @ 10 mA,
1 GHz		 @ 1 mA,
1 GHz		 IF = 10 MA
IR = 6 MA		 1 µsec
pulse
MLP7130 – MLP7122
(RF Characteristics)
Model
Continued
 Peak
Power In		 Threshold Leakage
Pout		 Insertion
Loss		 CW Power
In		 Recovery
Time
MAX dBm TYP dB TYP dBm TYP dB MAX W TYPnS
MLP7130 47 7 19 0.1 2 5
MLP7131 50 7 22 0.1 3 5
MLP7100 50 10 22 0.1 2 10
MLP7101 53 10 24 0.2 3 10
MLP7102 56 10 25 0.2 4 10
MLP7140 47 12 24 0.1 3 10
MLP7141 50 12 27 0.1 4 10
MLP7110 53 15 27 0.1 3 20
MLP7111 56 15 29 0.2 4 20
MLP7112 59 15 31 0.2 5 20
MLP7120 60 20 39 0.1 5 50
MLP7121 63 20 41 0.2 10 50
MLP7122 66 20 44 0.2 15 50
Test
Conditions		 1 2 2 3 4 5
  1. Pulsed thermal impedance is given for 1 m pulse. CW thermal impedance presumes infinite heat sink.

  2. Threshold input power produces 1 dB increase in insertion loss. 1 GHz

  3. Chip loss can be respresented as a resistance in shunt with the junction capacitance. 3 GHz, zero Bias.
    Loss data shown for 10 GHz for 0.15 and 0.30 pF chips, 5 CHz for 0.50 pF chips. Measured at-10 dBm
    input.

  4. Note that CW power and average power are not synonymous. Power ratings are computed in terms of a
    peak junction temperature of 200° C, for short pulses, an average junction temperature of 125° C,
    and an ambient of 25° C. Duty factor 0.001 assumed for maximum pulse power input.

  5. Recovery time is measured with ground return (less than 1.0 Ohms) to 1 dB excess loss, at 1 GHz.
Maximum Ratings
Parameters Rating
Operating Temperature -55° C to + 150° C
Maximum Leakage Current 0.5 mA at 88% of minimum rated breakdown