Silicon PIN Diodes: Ultrafast & Fast Switching, Low Power
The Aeroflex / Metelics MPN-7000 Series and MMP-7000 Series PIN diodes
are manufactured using very high resistivity silicon epitaxial material grown on a highly doped low resistivity substrate. Combined with a grown junction P++ layer, MMP-7000 Series PIN diodes yield a very abrupt structured “I” region with minimum outdoping and low voltage punch-through characteristics.
Our high temperature passivation and state-of-the-art metallization produce diodes that are designed to cover a wide range of applications that fall into the general categories of switching, phase switching, attenuating and limiting. These devices
are rugged and able to meet all visual criteria in space and military applications.
- High Temperature Passivation
for Reliability
- Grown Junction for sharp “I”
Region Interface
- Full Area Gold Contact for the Lowest Capacitance and Largest Bonding Pad Available
- Lot Traceability and Lot Control, Assuring High Reproducibility
Ultra Fast Switching
|
Model
|
VBR
|
CJ
|
Tl
|
 jc
|
TS
|
Rs
|
Rs
|
MIN V
|
MAX pF
|
TYP ns
|
MAX °C/W
|
MAX ns
|
MAX Ω
|
TYP Ω
|
MMP7010
|
25
|
0.1
|
10
|
60
|
1.5
|
0.7
|
1.0
|
MMP7011
|
25
|
0.15
|
10
|
50
|
1.5
|
0.55
|
0.8
|
MMP7012
|
25
|
0.2
|
10
|
40
|
1.5
|
0.45
|
0.7
|
MMP7013
|
25
|
0.25
|
10
|
35
|
1.5
|
0.4
|
0.6
|
Test Conditions
|
@ 10 µA
|
@ -10 V, 1 MHz
|
IF = 10 mA
IR = 6 mA
|
pulsed
|
90% to 10% and 10% to 90% transmission. Drive output = +20 mA and -4 V, 200 mA spike with
a rise time of 2 ns
|
50 mA @
1 GHz
|
10 mA @
1 GHz
|
Fast Switching, Low
Power
|
Model
|
VBR
|
CJ
|
Tl
|
jc
|
TS
|
Rs
|
Rs
|
MIN V
|
MAX pF
|
TYP ns
|
MAX °C/W
|
MAX ns
|
MAX Ω
|
TYP Ω
|
MMP7020
|
70
|
0.05
|
60
|
80
|
5
|
0.9
|
1.2
|
MMP7021
|
70
|
0.1
|
60
|
70
|
5
|
0.7
|
1.0
|
MMP7022
|
70
|
0.15
|
60
|
60
|
5
|
0.6
|
0.9
|
MMP7023
|
70
|
0.2
|
60
|
55
|
5
|
0.5
|
0.7
|
MMP7024
|
70
|
0.25
|
60
|
50
|
5
|
0.45
|
0.5
|
MMP7025
|
100
|
0.03
|
100
|
90
|
10
|
1.2
|
1.9
|
MMP7026
|
100
|
0.07
|
100
|
80
|
10
|
0.9
|
1.5
|
MMP7027
|
100
|
0.1
|
100
|
70
|
10
|
0.7
|
1.2
|
MMP7028
|
100
|
0.15
|
100
|
60
|
10
|
0.6
|
1.0
|
MMP7029
|
100
|
0.2
|
100
|
55
|
10
|
0.5
|
0.9
|
MMP7030
|
100
|
0.3
|
100
|
50
|
15
|
0.45
|
0.8
|
MMP7031
|
200
|
0.03
|
225
|
90
|
15
|
1.9
|
3.0
|
MMP7032
|
200
|
0.07
|
225
|
80
|
15
|
1.2
|
2.2
|
MMP7033
|
200
|
0.1
|
225
|
70
|
15
|
0.9
|
1.6
|
MMP7034
|
200
|
0.15
|
225
|
60
|
15
|
0.8
|
1.0
|
MMP7035
|
200
|
0.2
|
225
|
55
|
15
|
0.7
|
0.8
|
MMP7036
|
200
|
0.3
|
225
|
50
|
15
|
0.6
|
0.7
|
Test Conditions
|
@ 10 µA
|
@ -10 V, 1 MHz
|
IF = 10 mA
IR = 6mA
|
pulsed
|
90% to 10% and 10% to 90% transmission. Drive output = +20 mA and -4 volts, 200 mA spike
with a rise time of 2 ns
|
75 mA
@ 1 GHz
|
20 mA
@ 1 GHz
|
Maximum Ratings
|
Parameters
|
Rating
|
|
Operating
Temperature
|
-55° C to + 150° C
|
|
Storage Temperature
|
-65° C to + 200° C
|
|
Reverse Breakdown
|
from 25 volts to 500
volts
|
|
Reverse Current at VBR
|
volts @ 10 µA
|
|
Junction Capacitance
|
(Cj-10) from 0.03 pF to 0.5 pF at 10 volts
|
|
Switching Speed
|
from 1 ns to 25 ns
|
|
Lifetime
|
from 5 ns to 6.0 µs
|
|
Chip Thickness
|
.004 – .007” thick
|
|
| |
|
