Aeroflex Microelectronic Solutions

From GaAs to silicon. No one provides a more comprehensive approach to handling all your requests for standard and custom Schottkys, PINs, NIPs, varactors, detectors, limiters, capacitors, resistors, inductors, attenuator pads, and so much more. And they come delivered every way imaginable, from wafers to plastic surface mount.

Aeroflex Metelics Products

Silicon Schottky P-Type Diodes: Low Barrier

The Aeroflex / Metelics Schottky diodes are optimized for superior 1/f noise on P-type silicon epitaxial substrate with proprietary process. In general they require a small forward bias (5 ~ 50 μA) for small power levels below -20 dBm when used as microwave detectors.

  • Superior 1/f noise.
  • Better temperature stability than zero bias Schottky diode.
  • Low barrier height.
  • Passivated with silicon nitride.
  •   Spice Model 
VF @ 1 mA = 220 ~ 330 mV, Vbr@ 10 mA = 3 V min.
(Chip and Beam Lead)
Model VF CJ Rd F opt Package
Package
TYP MAX TYP MAX MAX MAX
MSS25,047-C15c 260 300 0.08 0.1 65 18 C15c
MSS25,049-C15c 220 260 0.1 0.12 52 12 C15c
MSS25,141-B10D 280 330 0.06 0.08 65 40 B10D
MSS25,143-B10D 260 300 0.08 0.1 60 26 B10D
MSS25,145-B10D 220 260 0.1 0.12 52 18 B10D
Test Conditions IF= 1 mA VR = 0.2 V
F = 1 MHz		 If= 5 mA GHz  
Maximum Ratings
Parameters Rating
Operation Temperature -65° C to 150° C
Storage Temperature -65° C to 150° C
Power Dissipation 150 mW per junction at 25° derate linearly to zero at Ta= +150° C
Soldering Temperature 230° C for 5 sec.