Silicon PIN Diodes:
High Power Switching & Attenuation
The Aeroflex / Metelics MPN-7000 Series and MMP-7000 Series PIN diodes
are manufactured using very high resistivity silicon epitaxial material grown on a highly doped low resistivity substrate. Combined with a grown junction P++ layer, MMP-7000 Series PIN diodes yield a very abrupt structured “I” region with minimum outdoping and low voltage punch-through characteristics.
Our high temperature passivation and state-of-the-art metallization produce diodes that are designed to cover a wide range of applications that fall into the general categories of switching, phase switching, attenuating and limiting. These devices
are rugged and able to meet all visual criteria in space and military applications.
- High Temperature Passivation
for Reliability
- Grown Junction for sharp “I”
Region Interface
- Full Area Gold Contact for the Lowest Capacitance and Largest Bonding Pad Available
- Lot Traceability and Lot Control, Assuring High Reproducibility
High Power Switching and Attenuation
|
Chips
|
Model
|
VBR
|
CJ
|
RS
|
t
|
I-layer
|
Contact
|
ӨJC
|
Package
|
MIN V
|
TYP pF
|
MAX pF
|
TYP Ω
|
MAX Ω
|
TYP
µs
|
NOM microns
|
MIN mils
|
MAX ºC / W
|
MPN7330
|
300
|
0.30
|
0.40
|
0.3
|
0.5
|
0.5
|
30
|
10
|
10
|
C40
|
MPN7345
|
300
|
0.30
|
0.40
|
0.3
|
0.5
|
0.5
|
45
|
10
|
10
|
C40
|
MPN7453A
|
300
|
0.10
|
0.15
|
0.7
|
1.0
|
0.7
|
60
|
8
|
20
|
C22
|
MPN7453B
|
400
|
0.15
|
0.2
|
0.6
|
0.9
|
2.5
|
60
|
8
|
20
|
C22
|
MPN7453C
|
300
|
0.18
|
0.25
|
0.4
|
0.7
|
1.0
|
60
|
8
|
15
|
C22
|
MPN7360
|
600
|
0.80
|
1.0
|
0.2
|
0.4
|
2.5
|
60
|
20
|
7
|
C37
|
MPN7370
|
700
|
2.00
|
2.3
|
0.2
|
0.3
|
5.0
|
70
|
40
|
5
|
C39
|
MPN7380
|
800
|
0.40
|
0.60
|
0.3
|
0.5
|
2.5
|
80
|
24
|
7
|
C38
|
MPN7420
|
400
|
0.06
|
0.08
|
1.0
|
1.5
|
1.0
|
100
|
5
|
30
|
C12
|
MPN73100
|
600
|
0.20
|
0.30
|
0.5
|
0.8
|
2.2
|
100
|
12
|
10
|
C32
|
MPN73120
|
700
|
0.30
|
0.40
|
0.5
|
0.8
|
3.5
|
120
|
15
|
10
|
C32
|
Test Conditions
|
IR = 10 µA
|
VR = 50 V
F = 1 MHz
|
IF = 100 mA
F = 100 MHz
|
IF = 10 mA IR = 6 mA
|
|
High Power Switching and Attenuation |
Model
|
VBR
|
CJ
|
Tl
|
Rs
|
Rs
|
Rs
|
ØJC
|
MIN V
|
MAX pF
|
TYP μs
|
MAX Ω
|
MAX Ω
|
TYP Ω
|
MAX °C/W
|
MMP7060
|
250
|
0.05
|
1.0
|
25
|
10.0
|
2.0
|
20
|
MMP7061
|
250
|
0.08
|
1.0
|
20
|
8.0
|
1.5
|
20
|
MMP7062
|
250
|
0.1
|
1.0
|
15
|
6.0
|
1.2
|
20
|
MMP7063
|
250
|
0.2
|
1.0
|
8
|
3.5
|
1.0
|
15
|
MMP7064
|
250
|
0.3
|
1.5
|
6
|
2.0
|
0.8
|
15
|
MMP7065
|
500
|
0.08
|
1.5
|
40
|
8.0
|
1.5
|
15
|
MMP7066
|
500
|
0.1
|
1.5
|
15
|
5.0
|
1.2
|
15
|
MMP7067
|
500
|
0.2
|
1.5
|
10
|
4.0
|
1.0
|
12
|
MMP7068
|
500
|
0.3
|
2.0
|
8
|
3.5
|
0.8
|
10
|
MMP7069
|
500
|
0.5
|
2.0
|
6
|
2.0
|
0.7
|
10
|
Test Conditions
|
@ 10 mA
|
@ -10V, 1 MHz
|
IF = 10 mA
IR = 10 mA
|
@ 1 mA,
100 MHz
|
@ 10 mA,
100 MHz
|
@ 100 mA,
100 MHz
|
pulsed
|
|
| |
|
